AP62T02GH

Pb Free Plating Product

Advanced Power Electronics Corp.▼ Simple Drive Requirement▼ Low On-resistance

▼ Fast Switching Characteristic

GSDN-CHANNEL ENHANCEMENT MODEPOWER MOSFET

BVDSSRDS(ON)ID

30V12mΩ48A

Description

The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltageapplications such as DC/DC converters. The through-hole version(AP62T02GJ) are available for low-profile applications.

GD

S

TO-252(H)

G

D

S

TO-251(J)

Absolute Maximum Ratings

SymbolVDSVGS

ID@TC=25℃ID@TC=100℃IDM

PD@TC=25℃EASIARTSTGTJ

Parameter

Drain-Source VoltageGate-Source Voltage

Continuous Drain Current, VGS @ 10VContinuous Drain Current, VGS @ 10VPulsed Drain Current1Total Power DissipationLinear Derating Factor

Single Pulse Avalanche Energy3Avalanche Current

Storage Temperature Range

Operating Junction Temperature Range

Rating30± 20483012036.80.32924-55 to 150-55 to 150

UnitsVVAAAW W/℃mJA℃℃

Thermal Data

SymbolRthj-cRthj-a

Parameter

Thermal Resistance Junction-caseThermal Resistance Junction-ambient

Max.Max.

Value3110

Units℃/W℃/W

Data and specifications subject to change without notice

200504062-1/4

AP62T02GH/J

Electrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSS

ΔBVDSS/ΔTj

Parameter

Drain-Source Breakdown VoltageStatic Drain-Source On-Resistance2

Test Conditions

VGS=0V, ID=250uA

Min.30---0.5---------------

Typ.-0.021013-34---132.687.590226.59502201601.1

Max.Units--12161.5-1250±10020------1420--1.7

VV/℃mΩmΩVSuAuAnAnCnCnCnsnsnsnspFpFpFΩ

Breakdown Voltage Temperature CoefficientReference to 25℃, ID=1mA

RDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrssRg

VGS=10V, ID=30AVGS=4.5V, ID=15AVDS=VGS, ID=250uAVDS=10V, ID=30AVDS=30V, VGS=0VVDS=24V ,VGS=0VVGS= ±20VID=30AVDS=24VVGS=4.5VVDS=15VID=30A

RG=3.3Ω,VGS=10VRD=0.5ΩVGS=0VVDS=25Vf=1.0MHzf=1.0MHz

Gate Threshold VoltageForward Transconductance

Drain-Source Leakage Current (Tj=25oC)Drain-Source Leakage Current (Tj=175oC)

Gate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceGate Resistance

Source-Drain Diode

SymbolVSDtrrQrr

Parameter

Forward On Voltage2

Reverse Recovery Time

2

Test Conditions

IS=30A, VGS=0VIS=20A, VGS=0V,dI/dt=100A/µs

Min.---

Typ.-3025

Max.Units1.3--VnsnC

Reverse Recovery Charge

Notes:

1.Pulse width limited by safe operating area.2.Pulse width <300us , duty cycle <2%.3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.

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AP62T02GH/J

120115TC=25CoID , Drain Current (A)ID , Drain Current (A)90 10V7.0V5.0V4.5VTC=150oC9210V7.0V 5.0V4.5V69604630VG=3.0V23VG=3.0V0024600.02.04.06.0VDS , Drain-to-Source Voltage (V)VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

15214 ID=15A TC=25℃1.6 ID=30AVG=10VNormalized RDS(ON)RDS(ON) (mΩ)131.2120.811102468100.4-50050100150VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (C)o Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

2.03020IS(A)Tj=150oCTj=25oCNormalized VGS(th) (V)1.41.51.0100.5000.20.40.60.811.20.0-50050100150VSD , Source-to-Drain Voltage (V)Tj , Junction Temperature ( oC ) Fig 5. Forward Characteristic of Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

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AP62T02GH/J

f=1.0MHz1210000 ID=30AVGS , Gate to Source Voltage (V)9VDS=15VVDS=20VVDS=24VC (pF)10006Ciss3CossCrss005101520251001591317212529QG , Total Gate Charge (nC)VDS , Drain-to-Source Voltage (V) Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

10001Normalized Thermal Response (Rthjc)Duty factor=0.50.2100ID (A)0.1100us100.10.05PDM0.020.01Tc=25CSingle Pulse10.1110o1ms10ms100ms1sDC100tTDuty factor = t/TPeak Tj = PDM x Rthjc + TCSingle Pulse0.010.000010.00010.0010.010.1110VDS , Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance100VDS=5V80VGQGID , Drain Current (A)Tj=25C60oTj=150Co4.5VQGSQGD4020Charge002468QVGS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

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