专利名称：Silicide Films Through Selective Deposition发明人：Swaminathan Srinivasan,Abhijit Basu
Mallick,Nicolas Breil
申请号：US16220816申请日：20181214
公开号：US20190189453A1公开日：20190620
专利附图：
摘要：Methods for forming silicide films are disclosed. Methods of selectively
depositing metal-containing films on silicon surfaces which are further processed to formsilicide films are disclosed. Specific embodiments of the disclosure relate to the
formation of silicide films on FinFET structures without the formation of a metal layer onthe dielectric.
申请人：Applied Materials, Inc.
地址：Santa Clara CA US
国籍：US
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