Circuit for esd protection

专利名称：Circuit for esd protection发明人：Seon Ho Hwang申请号：US10124204申请日：20020417

公开号：US20030048590A1公开日：20030313

专利附图：

摘要：A circuit for electro static discharge protection, for solving a problem ofconventional art that a degree of integration of the circuit is lowered because a size ofchip and a pitch between pads are increased if a high-voltage mos-transistor is used forapplying to a high voltage process, comprising: a first pad; a second pad; and a low-

voltage nmos-transistor unit connected between the first and second pads, that is, a low-voltage mos-transistor is applied to an electro static discharge protection circuit and alow-voltage mos-transistor which can be used in common is connected to the pads, andthereby, the size of the circuit is reduced to increase a degree of integration and the sizeof the pad and a pitch between the pads are reduced. Therefore, if the circuit of presentinvention is applied to a chip having a plurality of pins, then as ize of the chip can bereduced.

申请人：LG ELECTRONICS INC.

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