AO4803A资料

AO4803ADual P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThe AO4803A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4803A is Pb-free (meets ROHS & Sony 259 specifications)FeaturesVDS (V) = -30VID = -5 A (VGS = -10V)RDS(ON) < 46mΩ (VGS = -10V)RDS(ON) < 74mΩ (VGS = -4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested!SOIC-8Top ViewS2G2S1G112348765D2D2D1D1D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolVDSDrain-Source VoltageVGSGate-Source VoltageContinuous Drain Current AFPulsed Drain Current BTA=25°CPower DissipationAvalanche Current BTA=70°CTA=25°CTA=70°CIDIDMPDIAREARTJ, TSTGMaximum-30±20-5-4-3021.31118-55 to 150UnitsVVAWAmJ°CRepetitive avalanche energy 0.3mH BJunction and Storage Temperature RangeThermal CharacteristicsParameter

Maximum Junction-to-Ambient AMaximum Junction-to-Ambient AMaximum Junction-to-Lead C

Symbol

t ≤ 10sSteady-StateSteady-State

RθJARθJLTyp487435Max62.511040Units°C/W°C/W°C/W

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AO4803A

Electrical Characteristics (TJ=25°C unless otherwise noted)Symbol

Parameter

ConditionsID=-250µA, VGS=0V VDS=-30V, VGS=0V

TJ=55°C

VDS=0V, VGS=±20VVDS=VGS ID=-250µAVGS=-10V, VDS=-5VVGS=-10V, ID=5.0A

RDS(ON)gFSVSDIS

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-4A

Forward Transconductance

VDS=-5V, ID=-5A

Diode Forward VoltageIS=-1A,VGS=0VMaximum Body-Diode Continuous Current

TJ=125°C

-1.5-30

37526011-0.77

-1-2

668

VGS=0V, VDS=-15V, f=1MHzVGS=0V, VDS=0V, f=1MHz

12692612.7

VGS=-10V, VDS=-15V, ID=-5A

6.4247.7

VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω

IF=-5A, dI/dt=100A/µs

6.820102215

30916830466874

-2

Min-30

-1-5±100-2.5

Typ

Max

UnitsVµAnAVAmΩmΩSVApFpFpFΩnCnCnCnCnsnsnsnsnsnC

STATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)

Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain current

DYNAMIC PARAMETERSCissInput CapacitanceCossOutput CapacitanceCrssRg

Reverse Transfer CapacitanceGate resistance

SWITCHING PARAMETERS

Qg (10V)Total Gate Charge (10V)Qg (4.5V)Total Gate Charge (4.5V)QgsQgdtD(on)trtD(off)tftrrQrr

Gate Source ChargeGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery ChargeIF=-5A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.

F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.Rev0: Feb 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.www.aosmd.com

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AO4803A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS4035-10V-8V-5V3025-4.5V)(A D20-4V-I15VGS=-3.5V1050012345-VDS (Volts)Figure 1: On-Region Characteristics10080)VΩGS=-4.5Vm( )NO60(DSRVGS=-10V4020024IF6=-6.5A, dI/dt=100A/810-ID (A)Figure 3: On-Resistance vs. Drain Current and GateVoltage160140ID=-5A120)Ωm100( )NO(80125°CTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL DSR25°CCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING60OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,40-40°CFUNCTIONS AND RELIABILITY WITHOUT NOTICE.20246810-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageAlpha & Omega Semiconductor, Ltd.10VDS=-5V86125°C)(AD-I425°C2-40°C0012345-VGS(Volts)Figure 2: Transfer Characteristics1.6VGS=-10Ve1.4IcD=-5Anatsise1.2V-RGS=-4.5VnOID=-4A dez1.0ilamroN0.80.6-50050100150200Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature1E+011E+001E-01125°C)1E-02(A -IS1E-031E-0425°C-40°C1E-051E-060.00.20.40.60.81.01.2-VSD (Volts)Figure 6: Body-Diode Characteristicswww.aosmd.com

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AO4803A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS108-VGS (Volts)642003691215-Qg (nC)Figure 7: Gate-Charge CharacteristicsVDS=-15VID=-5A12001000CissCapacitance (pF)800600400Coss200Crss0051015202530-VDS (Volts)Figure 8: Capacitance Characteristics10040TJ(Max)=150°CTA=25°C-ID (Amps)100µs1msPower (W)10RDS(ON) limited30201TJ(Max)=150°CTA=25°CDC0.10.1110ms100ms1s10s10µsIF=-6.5A, dI/dt=100A/10100-VDS (Volts)00.0010.010.11101001000Figure 9: Maximum Forward Biased Safe Operating Area (Note E)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)10ZθJA Normalized Transient Thermal ResistanceIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse10.1THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PDCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGD=Ton/TOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,TJ,PK=TA+PDM.ZθJA.RθJA0.01TonR=110°C/WFUNCTIONS AND RELIABILITY WITHOUT NOTICE.TθJASingle Pulse0.0010.000010.00010.0010.010.11101001000Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)Alpha & Omega Semiconductor, Ltd.www.aosmd.com