BU2508AW

Silicon Diffused Power TransistorBU2508AW

GENERAL DESCRIPTION

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOLVCESMVCEOICICMPtotVCEsatICsattf

PARAMETER

Collector-emitter voltage peak valueCollector-emitter voltage (open base)Collector current (DC)

Collector current peak valueTotal power dissipation

Collector-emitter saturation voltageCollector saturation currentFall time

CONDITIONSVBE = 0 V

TYP.------4.50.4

MAX.15007008151251.0-0.6

UNITVVAAWVAµs

Tmb ≤ 25 ˚C

IC = 4.5 A; IB = 1.12 Af=16kHz

ICsat = 4.5 A;f=16kHz

PINNING - SOT429

PIN123tabbasecollectoremittercollectorDESCRIPTIONPIN CONFIGURATIONSYMBOL

cb123eLIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOLVCESMVCEOICICMIBIBM-IB(AV)-IBMPtotTstgTj

PARAMETER

Collector-emitter voltage peak valueCollector-emitter voltage (open base)Collector current (DC)

Collector current peak valueBase current (DC)

Base current peak valueReverse base current

Reverse base current peak value 1Total power dissipationStorage temperatureJunction temperature

CONDITIONSVBE = 0 V

MIN.----------55-MAX.15007008161005125150150

UNITVVAAAAmAAW˚C˚C

average over any 20 ms periodTmb ≤ 25 ˚C

THERMAL RESISTANCES

SYMBOLRth j-mbRth j-a

PARAMETER

Junction to mounting baseJunction to ambient

CONDITIONS-in free air

TYP.-45

MAX.1.0-UNITK/WK/W

1 Turn-off current.

September 19971Rev 1.100

Philips SemiconductorsProduct specification

Silicon Diffused Power TransistorBU2508AW

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specifiedSYMBOLICESICESIEBOBVEBOVCEOsustVCEsatVBEsathFEhFE

PARAMETER

Collector cut-off current 2

Emitter cut-off current

Emitter-base breakdown voltageCollector-emitter sustaining voltageCollector-emitter saturation voltageBase-emitter saturation voltageDC current gain

CONDITIONS

VBE = 0 V; VCE = VCESMmaxVBE = 0 V; VCE = VCESMmax;Tj = 125 ˚C

VEB = 7.5 V; IC = 0 AIB = 1 mA

IB = 0 A; IC = 100 mA;L = 25 mH

IC = 4.5 A; IB = 1.12 AIC = 4.5 A; IB = 1.7 AIC = 100 mA;VCE = 5 VIC = 4.5 A;VCE = 1 V

MIN.---7.5700---4

TYP.---13.5---135.5

MAX.1.02.01.0--1.01.1-7.0

UNITmAmAmAVVVV

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specifiedSYMBOLCctstf

PARAMETERCollector capacitanceSwitching times (16 kHz linedeflection circuit)Turn-off storage timeTurn-off fall time

Switching times (38 kHz linedeflection circuit)

tstf

Turn-off storage timeTurn-off fall time

CONDITIONS

IE = 0 A; VCB = 10 V; f = 1 MHzICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;-VBB = 4 V; (-dIB/dt = 0.6 A/µs)ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH;-VBB = 4 V; (-dIB/dt = 0.6 A/µs)

4.70.25

5.70.35

µsµs

TYP.805.00.4

MAX.-6.00.6

UNITpFµsµs

IC / mA+ 50v100-200R250HorizontalOscilloscopeVertical100R30-60 Hz6V1R2001000VCE / VminVCEOsustFig.1. Test circuit for VCEOsust.Fig.2. Oscilloscope display for VCEOsust.2 Measured with half sine-wave voltage (curve tracer).

September 19972Rev 1.100

Philips SemiconductorsProduct specification

Silicon Diffused Power TransistorBU2508AW

BU2508AICDIODEICsat100 hFEt5VIBIBendt20us26usus10 1VTj = 25 CTj = 125 CVCE1 0.01t0.1IC / A110Fig.3. Switching times waveforms.Fig.6. Typical DC current gain. hFE = f (IC)parameter VCEVBESAT / VTj = 25 CTj = 125 CICsat90 %IC1.2 1.1 1 0.9 BU2508A10 %tftsIBIBend0.8 t0.7 0.6 IC/IB=345t0.5 0.4 0.11IC / A10- IBMFig.4. Switching times definitions.Fig.7. Typical base-emitter saturation voltage.VBEsat = f (IC); parameter IC/IBVCESAT / VIC/IB=3Tj = 25 CTj = 125 C+ 150 v nominal adjust for ICsat1 0.9 0.8 0.7 0.6 0.5 0.4 BU2508A1mHIBendLBBU2508A12nFBY2280.3 0.2 0.1 0 0.11IC / A10-VBBFig.5. Switching times test circuit (BU2508A).Fig.8. Typical collector-emitter saturation voltage.VCEsat = f (IC); parameter IC/IBSeptember 19973Rev 1.100

Philips SemiconductorsProduct specification

Silicon Diffused Power TransistorBU2508AW

1.2 1.1 1 0.9 0.8 0.7 0.6 VBESAT / VTj = 25 CTj = 125 CBU2508AIC=6A4.5A3A2A012IB / A34ts, tf / us12 11 10 9 8 7 6 5 4 3 2 1 0 0.1BU2508AtsIC =3.5A4.5Atf1IB / A10Fig.9. Typical base-emitter saturation voltage.VBEsat = f (IB); parameter ICVCESAT / VBU2508ATj = 25 CTj = 125 CFig.12. Typical collector storage and fall time.ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHzZth / (K/W)10 10 6A4.5A1 3AIC=2A0.1 0.11IB / A101 0.50.20.10.050.02D = 00.1 PDtpD = tpTtT0.01 1E-061E-04t / s1E-021E+00Fig.10. Typical collector-emitter saturation voltage.VCEsat = f (IB); parameter ICEoff / uJBU2508AFig.13. Transient thermal impedance.Zth j-mb = f(t); parameter D = tp/TPD%Normalised Power Derating1000 120 110 100 90 80 70 60 50 40 30 20 10 IC = 4.5A3.5A100 10 0.11IB / A100 020406080100Tmb / C120140Fig.11. Typical turn-off losses. Tj = 85˚CEoff = f (IB); parameter IC; f = 16 kHzFig.14. Normalised power dissipation.PD% = 100⋅PD/PD 25˚C = f (Tmb)September 19974Rev 1.100

Philips Semiconductors Silicon Diffused Power Transistor100 IC / A = 0.01ICM maxtp =10 IC max5 us(1)II1020I501 1002005001 ms0.1 (2)251020DC0.01 1101001000VCE / VFig.15. Forward bias safe operating area. T(1)mb = 25˚C(2)PSecond-breakdown limitstot max line.I(independent of temperature).IIRegion of DC operation.Extension for repetitive pulse operation.September 19975Product specification

BU2508AW

Rev 1.100

Philips SemiconductorsProduct specification

Silicon Diffused Power TransistorBU2508AW

MECHANICAL DATA

Dimensions in mmNet Mass: 5 g5.33.521maxseatingplane7.316 max1.85.3 maxo3.5max15.5max2.515.5min4.0max12.2 max3.2 max5.45230.9 max0.4M1.15.45Fig.16. SOT429; pin 2 connected to mounting base.Notes1. Refer to mounting instructions for SOT429 envelope.2. Epoxy meets UL94 V0 at 1/8\".

September 19976Rev 1.100

Philips SemiconductorsProduct specification

Silicon Diffused Power TransistorBU2508AW

DEFINITIONS

Data sheet statusObjective specificationProduct specificationLimiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information

Where application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

This data sheet contains target or goal specifications for product development.This data sheet contains final product specifications.

Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

September 19977Rev 1.100